M I D E M 2 0 0 1 - International Conference on
Microelectronics, Devices and Materials
and the WORKSHOP on Optoelectronic Devices and Applications
Invited Speakers
The programme committee is pleased to announce the following invited speakers, who will give their presentations on the following subjects :
MIDEM Conference 2001:
Prof. Dr. Radivoje S. Popovic,
EPFL-Swiss Federal Institute of Technology Lausanne,
Christian Schott and Robert Racz,
SENTRON AG, Zug, Switzerland
Integrated Hall / Flux Concentrator Microsystems
The Workshop on Optoelectronic Devices and Applications:
Prof. Dr. Martin Stutzmann,
Walter Schottky Institut, Technische Universität München, Germany
The Status of GaN-based LEDs and Laser Diodes
Prof. Dr. R. E. I. Schropp,
Debye Institute, Physics of Devices, Utrecht University, Netherlands
New Developments in Thin Film Transistor Techology
Prof. Dr. Gil Rosenman,
Electrical Engineering-Physical Electronics, Tel Aviv University, Israel
Engineered Domain Configurations for Nonlinear Optical Devices
Dr. Christian Hanke,
Corporate Research Photonics, Infineon Technologies, Munich, Germany
High Power Semiconductor Laser Diodes
Dr. Helmut Stiebig,
Institut für Photovoltaik, Forschungszentrum Jülich, Germany
Color Aliasing Free Detectors
Dr. Matjaz Vidmar,
Faculty of Electrical Engineering, University of Ljubljana, Slovenia
Optical-fiber Communications: Components and Systems
Dr. Gvido Bratina,
Nova Gorica Polytechnic, Slovenia
Organic Semiconductors as Candidates for Advanced Optoelectronic Devices
For the Abstracts listed in the Workshop section please click one of the above links
(click the corresponding Abstract title)
or go to the
Workshop main page.
MIDEM Conference 2001 Abstracts (Invited Speakers):
Prof. Dr. Radivoje S. Popovic,
EPFL-Swiss Federal Institute of Technology Lausanne,
Christian Schott and Robert Racz,
SENTRON AG, Zug, Switzerland
Integrated Hall / Flux Concentrator Microsystems
Abstract: The speaker gives a survey of a new class of highly sensitive single-axis and two-axis integrated Hall magnetic sensor microsystems. They are based on an integrated combination of a CMOS integrated circuit and a planar magnetic flux concentrator. The magnetic flux concentrator is made of a thick ferromagnetic layer deposited on the CMOS wafer in a post-processing step. The CMOS part of the system contains two or more conventional Hall elements positioned under the peripheries of the flux concentrator. The flux concentrator converts locally a magnetic field parallel with the chip surface into a field perpendicular to the chip surface. Therefore, a conventional Hall element can detect an external magnetic field parallel with the chip surface. Moreover, the flux concentrator provides a magnetic gain of about 10.
MIDEM Conference 2001 homepage is edited by the
Laboratory of Semiconductor Devices,
Faculty of Electrical Engineering
University of Ljubljana